Computer and hardware memory manufacturer Rambus has announced a new initiative to develop a new generation of high-speed memory specifically for small form factor devices such as netbooks, smart devices and cellphones.
The Mobile Memory initiative seeks to develop a DRAM chip with an ultra low power draw as low as 100mV and a maximum sustained throughput of 4.3 Gbps (up to 17 GB) with a direct hardware connection requiring no additional PLL or DLL module using a combination of VLSD signaling, and a newly developed dynamic clocking interface known as FlexClocking which adjusts speed in real-time relative to application demand.
The first devices utilizing the products developed from the initiative are not expected to be released until 2010.
